power transistors 1 publication date: march 2003 SJD00074BED 2sb1435 silicon pnp epitaxial planar type for low-frequency output amplification features ? low collector-emitter saturation voltage v ce(sat) ? large collector current i c ? allowing automatic insertion with radial taping absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 50 v collector-emitter voltage (base open) v ceo ? 50 v emitter-base voltage (collector open) v ebo ? 5v collector current i c ? 2a peak collector current i cp ? 3a collector power dissipation p c 1.5 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c rank r s h fe1 120 to 240 170 to 340 note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification unit: mm 1: emitter 2: collector 3: base mt-3-a1 package 7.5 0.2 0.65 0.1 0.7 0.1 1.15 0.2 2.5 0.2 2.5 0.2 0.85 0.1 1.0 0.1 0.7 0.1 1.15 0.2 0.5 0.1 1 0.8 c 23 0.4 0.1 4.5 0.2 0.8 c 0.8 c 3.8 0.2 16.0 1.0 10.8 0.2 2.05 0.2 90? 2.5 0.1 parameter symbol conditions min typ max unit collector-base voltage (emiter open) v cbo i c = ? 10 a, i e = 0 ? 50 v collector-emitter voltage (base open) v ceo i c = ? 1 ma, i b = 0 ? 50 v emiter-base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 5v collector-base cutoff current (emitter open) i cbo v cb = ? 20 v, i e = 0 ? 0.1 a forward current transfer ratio h fe1 * v ce = ? 2 v, i c = ? 200 ma 120 340 ? h fe2 v ce = ? 2 v, i c = ? 1 a 60 collector-emitter saturation voltage v ce(sat) i c = ? 1 a, i b = ? 50 ma ? 0.2 ? 0.3 v base-emitter saturation voltage v be(sat) i c = ? 1 a, i b = ? 50 ma ? 0.85 ? 1.20 v transition frequency f t v cb = ? 10 v, i e = 50 ma, f = 200 mhz 80 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 45 60 pf (common base, input open circuited)
2sb1435 2 SJD00074BED p c ? t a i c ? v ce v ce(sat) ? i c v be(sat) ? i c h fe ? i c f t ? i e c ob ? v cb r th ? t 0 160 40 120 80 0 0.4 0.8 1.2 1.6 2.0 collector power dissipation p c (w) ambient temperature t a ( c) without heat sink 0 1.8 1.5 1.2 0.9 0.6 0.3 010 24 8 6 collector current i c (a) collector-emitter voltage v ce (v) ta=25?c ?ma ?ma ?ma ?ma ?ma ?ma ?ma i b =?ma 0.001 1 0.01 0.1 1 10 10 100 1 000 i c /i b =20 ta=75?c ta=?5?c ta=25?c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0.01 1 0.1 1 10 100 10 100 1 000 base-emitter saturation voltage v be(sat) (v) collector current i c (ma) i c /i b =20 ta=?5?c ta=25?c ta=75?c 0 1 480 400 320 240 160 80 10 100 1 000 v ce =?v ta=75?c 25?c ?5?c forward current transfer ratio h fe collector current i c (ma) 1 10 100 0 240 200 160 120 80 40 transition frequency f t (mhz) emitter current i e (ma) v cb =?0v f=200mhz t c =25?c 0 1 120 100 80 60 40 20 10 100 f=1mhz i e =0 t c =25?c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 10 ? 1 1 10 10 2 10 4 10 3 10 ? 4 10 4 10 3 10 2 10 1 10 ? 1 10 ? 2 10 ? 3 time t (s) thermal resistance r th ( c/w) without heat sink
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